EECS 3400 - Electronics IÌýCourse Syllabus
Credits/Contact Hours
4 credit hours & 150 minutes lecture plus 2.5 hours of lab contact per week.
Textbook
Richard Jaeger and Travis Blalock, “Microelectronic Circuit Design,� 5th edition ©
2015, McGraw Hill, ISBN-13: ‎ 978-0073529608
Course Information
Large signal and incremental characteristics of the pn diode, BJT, MOSFET and JFET:
Large signal analysis and computer simulation of devices and digital circuits; Logic
gate implementation; Laboratory experiments and projects.
Prerequisites: EECS 2300
Required course
Specific Goals - StudentÌýLearning ObjectivesÌý(SLOs)
The students will be able to:
- Apply the large signal method of analysis to electronic circuits that contain nonlinear circuit elements such as pn-junction diodes, FETs and BJTs.Ìý
- Apply SPICE application simulation method of analysis toÌýÌýÌýÌýÌýelectronic circuits that contain nonlinear circuit elements such as pn-junction diodes, FETs and BJTs.ÌýÌý
- Design FET and BJT inverter circuits with a required noise margin and fan-out, inverters of minimum size, with equal rise and fall times, and with specified logic threshold voltage value.ÌýÌý
- Analyze combinational logic circuits to derive the Boolean function implemented by the given logic circuit. Ìý
- Design combinational static CMOS gates to implement a desired Boolean function, and to also design the transistor aspect ratios of a CMOS logic gate so that the gate has the same rise and fall times as the reference inverter.ÌýÌý
- Conduct experiments to collect, analyze, and interpret data.ÌýÌý
- Explain the properties of semiconductor materials and the mechanisms of charge transportation in the semiconductor materials.
Topics
- Introduction to ElectronicsÌý
- Solid State ElectronicsÌý
- Diodes and Diode CircuitsÌý
- Field Effect Transistors (JFET, MOSFET)Ìý
- Bipolar Junction Transistors (BJT)Ìý
- Intro to Digital ElectronicsÌý
- CMOS Logic DesignÌý
- MOS Memory and StorageÌý
- Bipolar Logic CircuitsÌý